Lattice dynamic, optical, and mechanical properties of nanostructured gallium antimonide (GaSb) semiconductor under the effect of pressure

The optical, mechanical, and lattice dynamic properties of nanostructured GaSb semiconductor have been determined. The influence of pressure on the Longitudinal and transversal sound velocities, reflectivity, phonon frequencies, micro-hardness, and the transverse effective charge has been investigated. The dependencies of bond-stretching force constant, bond-bending force constant, susceptibility, Cauchy ratio, Born ratio, effective charge, and ionicity on the pressure of zinc-blende GaSb semiconductor are also been studied. The calculations in the present work have been performed using the pseudo-potential method (EPM). Comparisons with the available experiment and other works show reasonable agreement. The studied properties of the considered material could be useful in optoelectronic applications.