Laser Diodes (850 nm) Based on an Asymmetric AlGaAs/GaAs Heterostructure with a Bulk Active Region for Generating High-Power Subnanosecond Optical Pulses

Laser diodes based on an asymmetric heterostructure AlGaAs/GaAs with a bulk active region, optimized for generating high-power subnanosecond optical pulses in the gain-switching mode, have been developed and investigated. The optimization of the asymmetric heterostructure design made it possible to...

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Veröffentlicht in:	Bulletin of the Lebedev Physics Institute 2023-10, Vol.50 (Suppl 5), p.S513-S519
Hauptverfasser:	Podoskin, A. A., Shushkanov, I. V., Shamakhov, V. V., Rizaev, A. E., Kondratov, M. I., Klimov, A. A., Zazulin, S. V., Slipchenko, S. O., Pikhtin, N. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Asymmetry Design optimization Diodes Heterostructures Lasers Optical pulses Physics Physics and Astronomy Pulse duration Semiconductor lasers Switching
Online-Zugang:	Volltext
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