Laser Diodes (850 nm) Based on an Asymmetric AlGaAs/GaAs Heterostructure with a Bulk Active Region for Generating High-Power Subnanosecond Optical Pulses

Laser diodes based on an asymmetric heterostructure AlGaAs/GaAs with a bulk active region, optimized for generating high-power subnanosecond optical pulses in the gain-switching mode, have been developed and investigated. The optimization of the asymmetric heterostructure design made it possible to obtain the parameter d / G = 4.2 µm (at the thickness d = 45 nm of the GaAs bulk active region and the optical confinement factor G = 1.08%). The developed laser diodes with a wide emitting aperture (100 µm) in the gain-switching mode demonstrated a peak output optical power of 22 W at a single pulse width at half maximum of less than 110 ps.