A one-step electrodeposition method was used to produce monoclinic Cu2SnS3 thin films for the development of solar cells

The monoclinic compound semiconductor Cu 2 SnS 3 (CTS) is a promising material for absorbing solar energy, with a direct bandgap of 0.9 to 1.7 eV, making it an ideal choice for cost-effective thin-film photovoltaic cells. This study presents a method for the one-step electrodeposition of CTS thin films on FTO substrates at room temperature, without the Sulfurization step. We examined the impact of deposition time on the properties of CTS thin films. Films of high crystalline quality were obtained in 20 min. We used various techniques such as X-ray diffraction, Raman spectroscopy, emission field scanning electron microscopy, energy dispersive spectrometry and UV–visible spectroscopy. By carrying out these analyses, we succeeded in creating a thin film with remarkable morphological, structural and optical characteristics. This film was obtained in just 20 min of deposition and has a bandgap of 1.2 eV.