Scattering of e± by silicon atoms and transport coefficients in mixtures of inert gas with silicon vapor

This work reports on the differential and various angle integrated cross sections for the scattering of electrons and positrons by silicon atoms. Moreover, the Sherman function S ( θ ) and two other spin asymmetry parameters U ( θ ) and T ( θ ) have been calculated. Critical minima in the elastic differential cross sections and maximum spin polarization points were identified for this element. Dirac partial wave method with a complex optical model potential is used to carry out these investigations. Transport characteristics of electrons in silicon vapors and mixtures of inert gases (helium, argon) with silicon vapor were calculated using the Monte Carlo method. For electric field strengths ranging from 1 to 100 Td, drift velocity, average electron energy, diffusion and mobility coefficients, and electron energy distribution function are studied. We have shown that impurities of silicon vapor significantly affect electron transport in noble gases. Graphical Abstract