The Equation of Nonisothermal I-V Characteristic of a Schottky Diode With Thick Drift Layer

A simple analytical equation has been obtained, which satisfactorily describes the forward nonisothermal current-voltage curve of power Schottky diodes (SDs) with thick drift layer. The equation has been validated using power 4H-SiC SDs, including those commercially available. The results presented allow to make quite accurate assessment of the dependence of SD chip active area temperature on the values of forward voltage and current, as well as on the ambient temperature. This is useful when applied to the device development procedures and its exploitation process.