Influence of hybrid Fe/Cr parameters structures synthesised with laser radiation on their photosensitivity

Semiconductors are considered as promising materials for the criating of new photo-sensors. The photons generated by a KrF laser source (λ = 248 nm, τ FWHM ≤ 25 ns) at a fluency of 3.5 and 4.5 J/cm 2 were used for the synthesis of hybrid Fe/Cr 2D structures via the reaction of ablated iron and chromium atoms from combined target Fe/Cr with oxygen molecules (O 2 ) by reactive pulsed laser deposition (RPLD) process. Hybrid Fe/Cr 2D structures of (50–100) nm thickness were deposited on 293 or 800 K on Si substrates in O 2 atmosphere of 0.1, 0.5 Pa. GIXD (grazing incident X-ray diffraction) analysis evidenced amorphous structures of the deposits. Element analysis was carried out by energy dispersive X-ray spectroscopy (EDXS). Semiconductor temperature trend was detected with variable energy band gap ( E g ) in the range of (0.38–0.86) eV depending on the substrate temperature, O 2 pressure, hybrid Fe/Cr 2D structure thickness, and laser fluencies for atoms’ ablation. The highest photosensitivity of these hybrid Fe/Cr 2D structures was high as 300 V/W in the range of (293–800) K. The influence of hybrid Fe/Cr parameters structures’ synthesised with laser radiation on their photosensitivity was investigated. An interpretation for such high photosensitivity was provided. Thus synthesised 2D structures are exceptionally advanced materials for creation of photo-sensors operating at moderate temperatures.