Corrections to “Surface Leakage Behaviors of 2.6 μm In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth”

Corrections to “Surface Leakage Behaviors of 2.6 μm In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth”

In the above article [1] , the affiliations were written as: The authors are with the State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China (e-mail: may...

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Veröffentlicht in:IEEE journal of quantum electronics 2023-01, Vol.59 (6), p.1
Hauptverfasser: Liu, Yage, Ma, Yingjie, Li, Xue, Gu, Yi, Zhang, Yonggang, Gong, Haimei, Fang, Jiaxiong
Format: Artikel
Sprache:eng
Schlagworte:
Imaging material
Infrared imaging
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Zusammenfassung:In the above article [1] , the affiliations were written as: The authors are with the State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China (e-mail: mayingjie@mail.sitp.ac.cn; lixue@mail.sitp.ac.cn).
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2023.3301017