Diluted magnetic semiconductor behavior in Co- and Gd-co-doped ZnO nanotubes for spintronic applications

ZnO nanotubes were produced via co-precipitation, and the effects of Co and Gd on their structural, magnetic, and dielectric properties were reported. Utilizing Co and Gd into ZnO decreased the crystallization rate while maintaining the optimal symmetry, as shown by the results. The morphology of the synthesized nanotubes was shown to be unaffected by the Co and Gd dopants, as determined by transmission electron microscopy and scanning electron microscopy analyses. It was also shown that the dielectric constant and dielectric loss values increased with decreasing frequency and concentration of the Gd co-dopant. Doping was discovered to have an inverse relationship with the dielectric constant and the ac electrical conductivity reaction. Finally, ferromagnetic characteristics were observed in Co- and Gd-co-doped ZnO nanotubes at 300 K. The ferromagnetic reaction improved as Co and Gd co-doping was raised to 4%. Since then, increasing the Gd co-doping has resulted in a reduced ferromagnetic reaction. Electrical conductivity for the same material (Zn 0.92 Co 0.04 Gd 0.04 O nanotubes) was shown to be superior to pure and less in Co–Gd-co-doped ZnO. Magnetic impurities doped into the ZnO side often account for its high ferromagnetism. Given the properties of these nanotubes, they have potential applications in spintronics.