On the potential of AlGaN/GaN HFET for extreme environment electronics

The temperature significantly affects the performance of semiconductor devices. Therefore, it is mandatory to analyze its impact on the performance of these devices. GaN has fascinated as a material of choice for different semiconductor devices. The short channel effects are generated in the field effect transistors when the length of channel is comparable to the sum of depletion regions on the drain and source side. These short channel effects are more significant in the nanometer regime. It has been revealed that the drain current and transconductance reduces significantly with increase in temperature. It is also noticed that the apex value of the distortion parameters gm2 and gm3 occurs at lower value of temperature. The temperature is varied as 200, 250, 300, 350, and 400 ˚K.