Formation of Laser-Induced Periodic Structures on Thin Films of Transition Metal and Semiconductor Nitrides

The results on the formation of laser-induced periodic surface structures (LIPSSs) on TiN, CrN and Ge 3 N 4 films 25–400 nm thick using femtosecond laser pulses in the visible and IR ranges are presented. The effect of laser exposure parameters (wavelength, pulse energy, scanning rate) on the morphology and chemical composition of the formed structures is studied. The formation of ordered thermochemical LIPSSs with a complex nitride/oxide composition in the case of TiN and CrN films and ablation LIPSSs with a short period in the case of a Ge 3 N 4 film is revealed.