Formation of Hexagonal Phase 9R-Si in SiO/Si System upon Kr Ion Implantation

Hexagonal silicon polytypes have attracted significant attention within the scientific community due to their potential applications in next-generation electronics and photonics. However, obtaining stable heterostructures based on cubic and hexagonal polytypes is a challenging task. This study demon...

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Veröffentlicht in:Moscow University physics bulletin 2023, Vol.78 (3), p.361-367
Hauptverfasser: Nikolskaya, A. A., Korolev, D. S., Mikhaylov, A. N., Konakov, A. A., Okhapkin, A. I., Kraev, S. A., Andrianov, A. I., Moiseev, A. D., Sushkov, A. A., Pavlov, D. A., Tetelbaum, D. I.
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Sprache:eng
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Zusammenfassung:Hexagonal silicon polytypes have attracted significant attention within the scientific community due to their potential applications in next-generation electronics and photonics. However, obtaining stable heterostructures based on cubic and hexagonal polytypes is a challenging task. This study demonstrates the synthesis of thin layers of the hexagonal phase of silicon, specifically 9R-Si, using a conventional microelectronics technique—ion implantation. Implantation of Kr ions was performed through a SiO layer, with thickness approximately twice the projected range of Kr ions, followed by high-temperature annealing. High-resolution transmission electron microscopy revealed that damage to Si substrate at the SiO interface resulted in the formation of a thin amorphous layer, which recrystallized during annealing, leading to the formation of the 9R-Si polytype. It is presumed that mechanical stresses induced by implantation through the oxide layer promote hexagonalization during subsequent high-temperature annealing. The effectiveness of hexagonalization was found to depend on the substrate orientation. In addition to the formation of the 9R-Si phase, under the utilized implantation and annealing parameters, silicon exhibited light-emitting defects, with photoluminescence observed at a wavelength of approximately 1240 nm up to temperatures of about 120 K. The obtained results may find applications in silicon micro-, nano-, and optoelectronics.
ISSN:0027-1349
1934-8460
DOI:10.3103/S0027134923030153