Electron-spin filter based on Dresselhaus spin-orbit-coupling modulated double-layered semiconductor microstructure

Owing to Dresselhaus spin-orbit-coupling effect, an electron-spin filter device is put forward in a double-layered semiconductor microstructure. An obvious electron-spin polarization is observed and its degree is associated with incident energy and in-plane wave vector of electron. Particularly, bot...

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Veröffentlicht in:IEEE electron device letters 2023-09, Vol.44 (9), p.1-1
Hauptverfasser: Lu, Ke-Yu, He, Zhi-Yi, Zu, Mi-Mi, Guo, Shi-Yu, Lu, Mao-Wang
Format: Artikel
Sprache:eng
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Zusammenfassung:Owing to Dresselhaus spin-orbit-coupling effect, an electron-spin filter device is put forward in a double-layered semiconductor microstructure. An obvious electron-spin polarization is observed and its degree is associated with incident energy and in-plane wave vector of electron. Particularly, both magnitude and sign of spin polarization ratio can be manipulated by strain engineering or layers' thickness. These interesting findings may be helpful for spintronics device applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3299952