A Vertical Phototransistor of Perovskite/Polymer Nano Heterojunction for Minimizing Ionic Defects
We report a vertical phototransistor based on nano heterojunction of perovskite nanocrystal and polymer semiconductor. The perovskite nanocrystals are of low-defect feature and the polymer spacing adjacent perovskite crystal helps the collection of photogenerated carriers. Compared with the pristine...
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| Veröffentlicht in: | IEEE electron device letters 2023-09, Vol.44 (9), p.1-1 |
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| container_title | IEEE electron device letters |
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| creator | Yang, Lurong Huang, Chenbo Chen, Qianqian Zeng, Wei She, Xiao-Jian |
| description | We report a vertical phototransistor based on nano heterojunction of perovskite nanocrystal and polymer semiconductor. The perovskite nanocrystals are of low-defect feature and the polymer spacing adjacent perovskite crystal helps the collection of photogenerated carriers. Compared with the pristine-film heterojunction method, our nano-heterojunction method reduces the dark current from 1.2×10 -5 A/cm 2 to 5.8×10 -8 A/cm 2 , improves the detectivity from 5.2×10 10 jones to 2.6×10 12 jones, and reduces the photocurrent decay by 95%. This also provides useful insights for pursuing high-performance and operational stable perovskite vertical phototransistors. |
| doi_str_mv | 10.1109/LED.2023.3296134 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2857096424</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10185030</ieee_id><sourcerecordid>2857096424</sourcerecordid><originalsourceid>FETCH-LOGICAL-c292t-48cdc131a63b223cc2b5fca31cc664518765ab6680fa47ef012ff510ecdbaa1d3</originalsourceid><addsrcrecordid>eNpNkE1PAjEURRujiYjuXbho4nqgr18zLAmgkKCyULdNp7RahCm2xQR_vUNg4eot7rn3JQehWyA9ADLozyfjHiWU9RgdSGD8DHVAiKogQrJz1CElh4IBkZfoKqUVIcB5yTtID_G7jdkbvcaLz5BDjrpJPuUQcXB4YWP4SV8-2_4irPcbG_GzbgKe2twmq11jsg8Ndi395Bu_8b---cCz0HiDx9ZZk9M1unB6nezN6XbR28PkdTQt5i-Ps9FwXhg6oLnglVkaYKAlqyllxtBaOKMZGCMlF1CVUuhayoo4zUvrCFDnBBBrlrXWsGRddH_c3cbwvbMpq1XYxaZ9qWglSjKQnPKWIkfKxJBStE5to9_ouFdA1EGkakWqg0h1EtlW7o4Vb639h0MlCCPsD_SVcEA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2857096424</pqid></control><display><type>article</type><title>A Vertical Phototransistor of Perovskite/Polymer Nano Heterojunction for Minimizing Ionic Defects</title><source>IEEE Electronic Library (IEL)</source><creator>Yang, Lurong ; Huang, Chenbo ; Chen, Qianqian ; Zeng, Wei ; She, Xiao-Jian</creator><creatorcontrib>Yang, Lurong ; Huang, Chenbo ; Chen, Qianqian ; Zeng, Wei ; She, Xiao-Jian</creatorcontrib><description>We report a vertical phototransistor based on nano heterojunction of perovskite nanocrystal and polymer semiconductor. The perovskite nanocrystals are of low-defect feature and the polymer spacing adjacent perovskite crystal helps the collection of photogenerated carriers. Compared with the pristine-film heterojunction method, our nano-heterojunction method reduces the dark current from 1.2×10 -5 A/cm 2 to 5.8×10 -8 A/cm 2 , improves the detectivity from 5.2×10 10 jones to 2.6×10 12 jones, and reduces the photocurrent decay by 95%. This also provides useful insights for pursuing high-performance and operational stable perovskite vertical phototransistors.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2023.3296134</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Crystal defects ; Dark current ; Electrodes ; Heterojunctions ; Ion migration ; Ions ; Nanocrystals ; Nanoscale devices ; Perovskite ; Perovskites ; Photoconductivity ; Photoelectric effect ; Phototransistors ; Polymers ; Vertical thin film transistor</subject><ispartof>IEEE electron device letters, 2023-09, Vol.44 (9), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-48cdc131a63b223cc2b5fca31cc664518765ab6680fa47ef012ff510ecdbaa1d3</citedby><cites>FETCH-LOGICAL-c292t-48cdc131a63b223cc2b5fca31cc664518765ab6680fa47ef012ff510ecdbaa1d3</cites><orcidid>0000-0003-2438-9068 ; 0000-0002-9032-6084</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10185030$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,778,782,794,27911,27912,54745</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10185030$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yang, Lurong</creatorcontrib><creatorcontrib>Huang, Chenbo</creatorcontrib><creatorcontrib>Chen, Qianqian</creatorcontrib><creatorcontrib>Zeng, Wei</creatorcontrib><creatorcontrib>She, Xiao-Jian</creatorcontrib><title>A Vertical Phototransistor of Perovskite/Polymer Nano Heterojunction for Minimizing Ionic Defects</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We report a vertical phototransistor based on nano heterojunction of perovskite nanocrystal and polymer semiconductor. The perovskite nanocrystals are of low-defect feature and the polymer spacing adjacent perovskite crystal helps the collection of photogenerated carriers. Compared with the pristine-film heterojunction method, our nano-heterojunction method reduces the dark current from 1.2×10 -5 A/cm 2 to 5.8×10 -8 A/cm 2 , improves the detectivity from 5.2×10 10 jones to 2.6×10 12 jones, and reduces the photocurrent decay by 95%. This also provides useful insights for pursuing high-performance and operational stable perovskite vertical phototransistors.</description><subject>Crystal defects</subject><subject>Dark current</subject><subject>Electrodes</subject><subject>Heterojunctions</subject><subject>Ion migration</subject><subject>Ions</subject><subject>Nanocrystals</subject><subject>Nanoscale devices</subject><subject>Perovskite</subject><subject>Perovskites</subject><subject>Photoconductivity</subject><subject>Photoelectric effect</subject><subject>Phototransistors</subject><subject>Polymers</subject><subject>Vertical thin film transistor</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkE1PAjEURRujiYjuXbho4nqgr18zLAmgkKCyULdNp7RahCm2xQR_vUNg4eot7rn3JQehWyA9ADLozyfjHiWU9RgdSGD8DHVAiKogQrJz1CElh4IBkZfoKqUVIcB5yTtID_G7jdkbvcaLz5BDjrpJPuUQcXB4YWP4SV8-2_4irPcbG_GzbgKe2twmq11jsg8Ndi395Bu_8b---cCz0HiDx9ZZk9M1unB6nezN6XbR28PkdTQt5i-Ps9FwXhg6oLnglVkaYKAlqyllxtBaOKMZGCMlF1CVUuhayoo4zUvrCFDnBBBrlrXWsGRddH_c3cbwvbMpq1XYxaZ9qWglSjKQnPKWIkfKxJBStE5to9_ouFdA1EGkakWqg0h1EtlW7o4Vb639h0MlCCPsD_SVcEA</recordid><startdate>20230901</startdate><enddate>20230901</enddate><creator>Yang, Lurong</creator><creator>Huang, Chenbo</creator><creator>Chen, Qianqian</creator><creator>Zeng, Wei</creator><creator>She, Xiao-Jian</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2438-9068</orcidid><orcidid>https://orcid.org/0000-0002-9032-6084</orcidid></search><sort><creationdate>20230901</creationdate><title>A Vertical Phototransistor of Perovskite/Polymer Nano Heterojunction for Minimizing Ionic Defects</title><author>Yang, Lurong ; Huang, Chenbo ; Chen, Qianqian ; Zeng, Wei ; She, Xiao-Jian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-48cdc131a63b223cc2b5fca31cc664518765ab6680fa47ef012ff510ecdbaa1d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Crystal defects</topic><topic>Dark current</topic><topic>Electrodes</topic><topic>Heterojunctions</topic><topic>Ion migration</topic><topic>Ions</topic><topic>Nanocrystals</topic><topic>Nanoscale devices</topic><topic>Perovskite</topic><topic>Perovskites</topic><topic>Photoconductivity</topic><topic>Photoelectric effect</topic><topic>Phototransistors</topic><topic>Polymers</topic><topic>Vertical thin film transistor</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Lurong</creatorcontrib><creatorcontrib>Huang, Chenbo</creatorcontrib><creatorcontrib>Chen, Qianqian</creatorcontrib><creatorcontrib>Zeng, Wei</creatorcontrib><creatorcontrib>She, Xiao-Jian</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yang, Lurong</au><au>Huang, Chenbo</au><au>Chen, Qianqian</au><au>Zeng, Wei</au><au>She, Xiao-Jian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Vertical Phototransistor of Perovskite/Polymer Nano Heterojunction for Minimizing Ionic Defects</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2023-09-01</date><risdate>2023</risdate><volume>44</volume><issue>9</issue><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We report a vertical phototransistor based on nano heterojunction of perovskite nanocrystal and polymer semiconductor. The perovskite nanocrystals are of low-defect feature and the polymer spacing adjacent perovskite crystal helps the collection of photogenerated carriers. Compared with the pristine-film heterojunction method, our nano-heterojunction method reduces the dark current from 1.2×10 -5 A/cm 2 to 5.8×10 -8 A/cm 2 , improves the detectivity from 5.2×10 10 jones to 2.6×10 12 jones, and reduces the photocurrent decay by 95%. This also provides useful insights for pursuing high-performance and operational stable perovskite vertical phototransistors.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2023.3296134</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0003-2438-9068</orcidid><orcidid>https://orcid.org/0000-0002-9032-6084</orcidid></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Crystal defects Dark current Electrodes Heterojunctions Ion migration Ions Nanocrystals Nanoscale devices Perovskite Perovskites Photoconductivity Photoelectric effect Phototransistors Polymers Vertical thin film transistor |
| title | A Vertical Phototransistor of Perovskite/Polymer Nano Heterojunction for Minimizing Ionic Defects |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T17%3A39%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Vertical%20Phototransistor%20of%20Perovskite/Polymer%20Nano%20Heterojunction%20for%20Minimizing%20Ionic%20Defects&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Yang,%20Lurong&rft.date=2023-09-01&rft.volume=44&rft.issue=9&rft.spage=1&rft.epage=1&rft.pages=1-1&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2023.3296134&rft_dat=%3Cproquest_RIE%3E2857096424%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2857096424&rft_id=info:pmid/&rft_ieee_id=10185030&rfr_iscdi=true |