A Vertical Phototransistor of Perovskite/Polymer Nano Heterojunction for Minimizing Ionic Defects
We report a vertical phototransistor based on nano heterojunction of perovskite nanocrystal and polymer semiconductor. The perovskite nanocrystals are of low-defect feature and the polymer spacing adjacent perovskite crystal helps the collection of photogenerated carriers. Compared with the pristine...
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Veröffentlicht in: | IEEE electron device letters 2023-09, Vol.44 (9), p.1-1 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report a vertical phototransistor based on nano heterojunction of perovskite nanocrystal and polymer semiconductor. The perovskite nanocrystals are of low-defect feature and the polymer spacing adjacent perovskite crystal helps the collection of photogenerated carriers. Compared with the pristine-film heterojunction method, our nano-heterojunction method reduces the dark current from 1.2×10 -5 A/cm 2 to 5.8×10 -8 A/cm 2 , improves the detectivity from 5.2×10 10 jones to 2.6×10 12 jones, and reduces the photocurrent decay by 95%. This also provides useful insights for pursuing high-performance and operational stable perovskite vertical phototransistors. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2023.3296134 |