A Vertical Phototransistor of Perovskite/Polymer Nano Heterojunction for Minimizing Ionic Defects

We report a vertical phototransistor based on nano heterojunction of perovskite nanocrystal and polymer semiconductor. The perovskite nanocrystals are of low-defect feature and the polymer spacing adjacent perovskite crystal helps the collection of photogenerated carriers. Compared with the pristine...

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Veröffentlicht in:IEEE electron device letters 2023-09, Vol.44 (9), p.1-1
Hauptverfasser: Yang, Lurong, Huang, Chenbo, Chen, Qianqian, Zeng, Wei, She, Xiao-Jian
Format: Artikel
Sprache:eng
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Zusammenfassung:We report a vertical phototransistor based on nano heterojunction of perovskite nanocrystal and polymer semiconductor. The perovskite nanocrystals are of low-defect feature and the polymer spacing adjacent perovskite crystal helps the collection of photogenerated carriers. Compared with the pristine-film heterojunction method, our nano-heterojunction method reduces the dark current from 1.2×10 -5 A/cm 2 to 5.8×10 -8 A/cm 2 , improves the detectivity from 5.2×10 10 jones to 2.6×10 12 jones, and reduces the photocurrent decay by 95%. This also provides useful insights for pursuing high-performance and operational stable perovskite vertical phototransistors.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3296134