Correction: Gd–Er interaction promotes NaGdF4:Yb, Er as a new candidate for high-power density applications

Correction: Gd–Er interaction promotes NaGdF4:Yb, Er as a new candidate for high-power density applications

Correction for ‘Gd–Er interaction promotes NaGdF4:Yb, Er as a new candidate for high-power density applications’ by Daniel Avram et al., J. Mater. Chem. C, 2023, https://doi.org/10.1039/d3tc01391j.

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2023-01, Vol.11 (33), p.11409-11410
Hauptverfasser: Avram, Daniel, Patrascu, Andrei A, Istrate, Marian Cosmin, Tiseanu, Carmen
Format: Artikel
Sprache:eng
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Zusammenfassung:Correction for ‘Gd–Er interaction promotes NaGdF4:Yb, Er as a new candidate for high-power density applications’ by Daniel Avram et al., J. Mater. Chem. C, 2023, https://doi.org/10.1039/d3tc01391j.
ISSN:2050-7526
2050-7534
DOI:10.1039/d3tc90168h