Effect of gamma-ray irradiation on structural and optical property of WSe2 film
In the present work, RF sputtering synthesis method is used for the synthesis of tungsten diselenide (WSe 2 ) films. These WSe 2 films were studied using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and UV–Visible spectroscopy techniques. Further, Co-60 gamma...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2023-08, Vol.34 (24), p.1704, Article 1704 |
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| creator | Kolhe, P. T. Dalvi, S. N. Hase, Y. V. Jadhav, P. R. Ghemud, V. S. Jadkar, S. R. Dhole, S. D. Dahiwale, S. S. |
| description | In the present work, RF sputtering synthesis method is used for the synthesis of tungsten diselenide (WSe
2
) films. These WSe
2
films were studied using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and UV–Visible spectroscopy techniques. Further, Co-60 gamma rays of 1 kGy, 10 kGy, and 100 kGy doses were irradiated on these films. The structural characterization techniques XRD and Raman spectra show that with increase in gamma dose of WSe
2
film increases the strain
ε
produced in the material. For validation of oxygen occupying the selenium vacancy in WSe
2
thin film is confirmed through X-ray photoelectron spectroscopy (XPS) spectra. The optical band gap is also seen to decrease from 1.60 to 1.14 eV with the increasing gamma dose from 1 to 100 kGy, and can be attributed to the defect induced in the WSe
2
sample. The
I–V
curve also shows a significant linear increase in current of gamma-irradiated WSe
2
thin films. These changes induced in the structural, optical and electrical properties of the WSe
2
thin films due to gamma irradiation have proved possible applications of these samples in optoelectronics, space, and defense system. |
| doi_str_mv | 10.1007/s10854-023-11088-0 |
| format | Article |
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2
) films. These WSe
2
films were studied using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and UV–Visible spectroscopy techniques. Further, Co-60 gamma rays of 1 kGy, 10 kGy, and 100 kGy doses were irradiated on these films. The structural characterization techniques XRD and Raman spectra show that with increase in gamma dose of WSe
2
film increases the strain
ε
produced in the material. For validation of oxygen occupying the selenium vacancy in WSe
2
thin film is confirmed through X-ray photoelectron spectroscopy (XPS) spectra. The optical band gap is also seen to decrease from 1.60 to 1.14 eV with the increasing gamma dose from 1 to 100 kGy, and can be attributed to the defect induced in the WSe
2
sample. The
I–V
curve also shows a significant linear increase in current of gamma-irradiated WSe
2
thin films. These changes induced in the structural, optical and electrical properties of the WSe
2
thin films due to gamma irradiation have proved possible applications of these samples in optoelectronics, space, and defense system.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-023-11088-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electrical properties ; Gamma irradiation ; Gamma rays ; Materials Science ; Optical and Electronic Materials ; Optical properties ; Optoelectronics ; Photoelectrons ; Raman spectra ; Raman spectroscopy ; Selenides ; Selenium ; Spectrum analysis ; Structural analysis ; Synthesis ; Thin films ; Tungsten compounds ; X ray photoelectron spectroscopy ; X-ray diffraction</subject><ispartof>Journal of materials science. Materials in electronics, 2023-08, Vol.34 (24), p.1704, Article 1704</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-1e6b97327ca1e2152d29a7461a4f315bba0503843a037cddf8327f4967d46cf03</citedby><cites>FETCH-LOGICAL-c319t-1e6b97327ca1e2152d29a7461a4f315bba0503843a037cddf8327f4967d46cf03</cites><orcidid>0000-0003-4060-3984</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-023-11088-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-023-11088-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Kolhe, P. T.</creatorcontrib><creatorcontrib>Dalvi, S. N.</creatorcontrib><creatorcontrib>Hase, Y. V.</creatorcontrib><creatorcontrib>Jadhav, P. R.</creatorcontrib><creatorcontrib>Ghemud, V. S.</creatorcontrib><creatorcontrib>Jadkar, S. R.</creatorcontrib><creatorcontrib>Dhole, S. D.</creatorcontrib><creatorcontrib>Dahiwale, S. S.</creatorcontrib><title>Effect of gamma-ray irradiation on structural and optical property of WSe2 film</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>In the present work, RF sputtering synthesis method is used for the synthesis of tungsten diselenide (WSe
2
) films. These WSe
2
films were studied using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and UV–Visible spectroscopy techniques. Further, Co-60 gamma rays of 1 kGy, 10 kGy, and 100 kGy doses were irradiated on these films. The structural characterization techniques XRD and Raman spectra show that with increase in gamma dose of WSe
2
film increases the strain
ε
produced in the material. For validation of oxygen occupying the selenium vacancy in WSe
2
thin film is confirmed through X-ray photoelectron spectroscopy (XPS) spectra. The optical band gap is also seen to decrease from 1.60 to 1.14 eV with the increasing gamma dose from 1 to 100 kGy, and can be attributed to the defect induced in the WSe
2
sample. The
I–V
curve also shows a significant linear increase in current of gamma-irradiated WSe
2
thin films. These changes induced in the structural, optical and electrical properties of the WSe
2
thin films due to gamma irradiation have proved possible applications of these samples in optoelectronics, space, and defense system.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electrical properties</subject><subject>Gamma irradiation</subject><subject>Gamma rays</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Optoelectronics</subject><subject>Photoelectrons</subject><subject>Raman spectra</subject><subject>Raman spectroscopy</subject><subject>Selenides</subject><subject>Selenium</subject><subject>Spectrum analysis</subject><subject>Structural analysis</subject><subject>Synthesis</subject><subject>Thin films</subject><subject>Tungsten compounds</subject><subject>X ray photoelectron spectroscopy</subject><subject>X-ray diffraction</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kEtLAzEUhYMoWKt_wNWA6-jNa5JZSqkPELpQ0V1IM0mZ0nmYZBb992YcwZ1w4Z7Fd869HISuCdwSAHkXCSjBMVCGSZYKwwlaECEZ5op-nqIFVEJiLig9Rxcx7gGg5Ewt0GbtvbOp6H2xM21rcDDHognB1I1JTd8VeWIKo01jMIfCdHXRD6mxWQ-hH1xIx8n78epo4ZtDe4nOvDlEd_W7l-j9Yf22esIvm8fn1f0LtoxUCRNXbivJqLSGOEoErWllJC-J4Z4Rsd0aEMAUZwaYtHXtVWY9r0pZ89J6YEt0M-fmL75GF5Pe92Po8klNlSiJ4FJMFJ0pG_oYg_N6CE1rwlET0FNxei5O5-L0T3F6MrHZFDPc7Vz4i_7H9Q3Qu2-c</recordid><startdate>20230801</startdate><enddate>20230801</enddate><creator>Kolhe, P. 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T.</creatorcontrib><creatorcontrib>Dalvi, S. N.</creatorcontrib><creatorcontrib>Hase, Y. V.</creatorcontrib><creatorcontrib>Jadhav, P. R.</creatorcontrib><creatorcontrib>Ghemud, V. S.</creatorcontrib><creatorcontrib>Jadkar, S. R.</creatorcontrib><creatorcontrib>Dhole, S. D.</creatorcontrib><creatorcontrib>Dahiwale, S. 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kolhe, P. T.</au><au>Dalvi, S. N.</au><au>Hase, Y. V.</au><au>Jadhav, P. R.</au><au>Ghemud, V. S.</au><au>Jadkar, S. R.</au><au>Dhole, S. D.</au><au>Dahiwale, S. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of gamma-ray irradiation on structural and optical property of WSe2 film</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2023-08-01</date><risdate>2023</risdate><volume>34</volume><issue>24</issue><spage>1704</spage><pages>1704-</pages><artnum>1704</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In the present work, RF sputtering synthesis method is used for the synthesis of tungsten diselenide (WSe
2
) films. These WSe
2
films were studied using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and UV–Visible spectroscopy techniques. Further, Co-60 gamma rays of 1 kGy, 10 kGy, and 100 kGy doses were irradiated on these films. The structural characterization techniques XRD and Raman spectra show that with increase in gamma dose of WSe
2
film increases the strain
ε
produced in the material. For validation of oxygen occupying the selenium vacancy in WSe
2
thin film is confirmed through X-ray photoelectron spectroscopy (XPS) spectra. The optical band gap is also seen to decrease from 1.60 to 1.14 eV with the increasing gamma dose from 1 to 100 kGy, and can be attributed to the defect induced in the WSe
2
sample. The
I–V
curve also shows a significant linear increase in current of gamma-irradiated WSe
2
thin films. These changes induced in the structural, optical and electrical properties of the WSe
2
thin films due to gamma irradiation have proved possible applications of these samples in optoelectronics, space, and defense system.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-023-11088-0</doi><orcidid>https://orcid.org/0000-0003-4060-3984</orcidid></addata></record> |
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| ispartof | Journal of materials science. Materials in electronics, 2023-08, Vol.34 (24), p.1704, Article 1704 |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Electrical properties Gamma irradiation Gamma rays Materials Science Optical and Electronic Materials Optical properties Optoelectronics Photoelectrons Raman spectra Raman spectroscopy Selenides Selenium Spectrum analysis Structural analysis Synthesis Thin films Tungsten compounds X ray photoelectron spectroscopy X-ray diffraction |
| title | Effect of gamma-ray irradiation on structural and optical property of WSe2 film |
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