Effect of gamma-ray irradiation on structural and optical property of WSe2 film

In the present work, RF sputtering synthesis method is used for the synthesis of tungsten diselenide (WSe 2 ) films. These WSe 2 films were studied using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and UV–Visible spectroscopy techniques. Further, Co-60 gamma rays of 1 kGy, 10 kGy, and 100 kGy doses were irradiated on these films. The structural characterization techniques XRD and Raman spectra show that with increase in gamma dose of WSe 2 film increases the strain ε produced in the material. For validation of oxygen occupying the selenium vacancy in WSe 2 thin film is confirmed through X-ray photoelectron spectroscopy (XPS) spectra. The optical band gap is also seen to decrease from 1.60 to 1.14 eV with the increasing gamma dose from 1 to 100 kGy, and can be attributed to the defect induced in the WSe 2 sample. The I–V curve also shows a significant linear increase in current of gamma-irradiated WSe 2 thin films. These changes induced in the structural, optical and electrical properties of the WSe 2 thin films due to gamma irradiation have proved possible applications of these samples in optoelectronics, space, and defense system.