A unified realization of the modified Einstein equation approach in organic semiconductors: theoretical interpretation and experimental validation

An analytical approach has been introduced to determine the applicability of Einstein equation in organic semiconductors. In our proposed theoretical work, modified Einstein equation is implemented directly in Mott–Gurney equation to obtain permittivity of the semiconductor. Our proposed theoretical outcome has also been validated by introducing it in the current–voltage relation plot obtained in GPVDM simulation. Simulation result shows high consistency with our proposed theoretical work. Experiments have also been performed on turmeric dye-based natural organic semiconductor at 303–338 K temperature range on the basis of proposed theoretical aspect. High consistency has been obtained from the outcome of performed experiments. Material permittivity-related other parameters have been estimated from repeated experiment at aforementioned temperature range which indicates the reliability of our proposed applicability of modified Einstein equation and helps to give a fruitful explanation of current conduction into organic semiconductors.