2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC

Aluminum nitride (AlN) offers novel potential for electronic integration and performance benefits for high‐power, millimeter‐wave amplification. Herein, load‐pull power performance at 30 and 94 GHz for AlN/GaN/AlN high‐electron‐mobility transistors (HEMTs) on silicon carbide (SiC) is reported. When tuned for peak power‐added efficiency (PAE), the reported AlN/GaN/AlN HEMT shows PAE of 25% and 15%, with associated output power (Pout) of 2.5 and 1.7 W mm−1, at 30 and 94 GHz, respectively. At 94 GHz, the maximum Pout generated is 2.2 W mm−1, with associated PAE of 13%. Aluminum nitride (AlN) offers novel potential for electronic integration and performance benefits for high‐power, millimeter‐wave amplification. When tuned for peak power‐added efficiency (PAE), the presented AlN/GaN/AlN high‐electron‐mobility transistors show PAE of 25% and 15%, with associated output power (Pout) of 2.5 and 1.7 W mm−1, at 30 and 94 GHz, respectively.