Characterization of Lateral and Longitudinal Mode Competition in Blue InGaN Broad‐Ridge Laser Diodes
In blue GaN‐based laser diodes with a 40 μm broad‐ridge waveguide, lateral modes of different order are selectively observed by high‐resolution spectroscopy combined with lateral near‐field scanning. Longitudinal mode clusters contribute to different lateral modes, close above the threshold current....
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Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2023-08, Vol.220 (16), p.n/a |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In blue GaN‐based laser diodes with a 40 μm broad‐ridge waveguide, lateral modes of different order are selectively observed by high‐resolution spectroscopy combined with lateral near‐field scanning. Longitudinal mode clusters contribute to different lateral modes, close above the threshold current. Longitudinal mode competition is observed in each longitudinal mode cluster as intensity modulation and wavelength shift, repeating itself with a frequency of around 60–80 MHz. Despite the spectral separation of the different clusters and different lateral mode order, the mode competition processes share the same frequency and show a stable phase relation, especially at low currents. This indicates coupling of separate mode clusters via the charge carrier density. Due to the lateral modes occurring at separate wavelengths, lateral–longitudinal mode competition is found, which not only causes spectral effects but also time‐dependent periodic variations in the lateral near field.
Laser diodes show dynamic mode competition that causes cyclic variations in the laser spectrum in the frequency range of 50–100 MHz. In broad‐ridge laser diodes, lateral modes of different order occupy separate spectral clusters and take part in mode competition. Coupling between lateral modes is investigated in terms of frequency and phase difference of mode competition effects. |
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ISSN: | 1862-6300 1862-6319 |
DOI: | 10.1002/pssa.202200751 |