Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

Total-ionizing-dose (TID) effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) are evaluated by dc and low-frequency noise measurements. Devices with and without passivation layers are irradiated with 10-keV X-rays up to 100 Mrad(SiO2) under different bias conditions. Irradiated devices s...

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Veröffentlicht in:	IEEE transactions on nuclear science 2023-08, Vol.70 (8), p.2042-2050
Hauptverfasser:	Bonaldo, Stefano, Zhang, En Xia, Mattiazzo, Serena, Paccagnella, Alessandro, Gerardin, Simone, Schrimpf, Ronald D., Fleetwood, Daniel M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Gallium nitrides High electron mobility transistors LF noise Semiconductor devices Silicon dioxide Threshold voltage Transconductance
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