Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

Total-ionizing-dose (TID) effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) are evaluated by dc and low-frequency noise measurements. Devices with and without passivation layers are irradiated with 10-keV X-rays up to 100 Mrad(SiO2) under different bias conditions. Irradiated devices s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 2023-08, Vol.70 (8), p.2042-2050
Hauptverfasser: Bonaldo, Stefano, Zhang, En Xia, Mattiazzo, Serena, Paccagnella, Alessandro, Gerardin, Simone, Schrimpf, Ronald D., Fleetwood, Daniel M.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium nitrides
Gallium nitrides
High electron mobility transistors
LF noise
Semiconductor devices
Silicon dioxide
Threshold voltage
Transconductance
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Total-ionizing-dose (TID) effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) are evaluated by dc and low-frequency noise measurements. Devices with and without passivation layers are irradiated with 10-keV X-rays up to 100 Mrad(SiO2) under different bias conditions. Irradiated devices show significant electrical shifts in threshold voltage and transconductance. At doses
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2023.3237179