Investigation of electrically active defects in SiC power diodes caused by heavy ion irradiation

Investigation of electrically active defects in SiC power diodes caused by heavy ion irradiation

Deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) are used to investigate electrically active defects in commercial SiC Schottky power diodes after heavy-ion microbeam irradiation at different voltages. The DLTS and MCTS spectra of pristine samples are analy...

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Veröffentlicht in:IEEE transactions on nuclear science 2023-08, Vol.70 (8), p.1-1
Hauptverfasser: Fur, N., Belanche, M., Martinella, C., Kumar, P., Bathen, M. E., Grossner, U.
Format: Artikel
Sprache:eng
Schlagworte:
Conduction bands
Deep level transient spectroscopy
Defects
degradation
DLTS
Heavy ions
heavy-ion
Ion irradiation
Ions
Irradiation
JBS
Leakage current
Leakage currents
MCTS
microbeam
Microbeams
Minority carriers
Radiation effects
Schottky diodes
SEE
SELC
Semiconductor device measurement
SiC power diodes
Silicon carbide
Spectra
Spectroscopy
Temperature measurement
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Zusammenfassung:Deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) are used to investigate electrically active defects in commercial SiC Schottky power diodes after heavy-ion microbeam irradiation at different voltages. The DLTS and MCTS spectra of pristine samples are analysed and compared to devices showing or not signatures of Single Event Leakage Current (SELC) degradation. An additional peak labelled 'C' with an activation energy of 0.17 eV below the conduction band edge is observed in the DLTS spectra of a sample degraded with SELC.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2023.3242760