110-GHz bandwidth integrated lithium niobate modulator without direct lithium niobate etching

Integrated thin film lithium niobate (TFLN) modulators are emerging as an appealing solution to high-speed data processing and transmission due to their high modulation speed and low driving voltage. The key step in fabricating integrated TFLN modulators is the high-quality etching of TFLN, which ty...

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Veröffentlicht in:arXiv.org 2023-11
Hauptverfasser: Qi, Yifan, Gongcheng Yue, Ting Hao, Yang, Li
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Sprache:eng
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Zusammenfassung:Integrated thin film lithium niobate (TFLN) modulators are emerging as an appealing solution to high-speed data processing and transmission due to their high modulation speed and low driving voltage. The key step in fabricating integrated TFLN modulators is the high-quality etching of TFLN, which typically requires long-term optimization of fabrication recipe and specialized equipment. Here we present an integrated TFLN modulator by incorporating low-index rib loaded waveguides onto TFLN without direct etching of TFLN. Based on our systematic investigation into the theory and design methodology of the proposed design, we experimentally demonstrated a TFLN etching-free Mach-Zehnder modulator, featuring a flat electro-optic response up to 110 GHz and a voltage-length product of 2.53 V cm. By significantly simplifying the fabrication process, our design opens up new ways of mass production of high-speed integrated TFLN modulators at low cost.
ISSN:2331-8422