Understanding Dopant–Host Interactions on Electronic Structures and Optical Properties in Ce‐Doped WS2 Monolayers

Substitutional lanthanide doping of 2D transition metal dichalcogenides (TMDs) is expected to be a promising strategy to engineer optical, electronic, and optoelectronic properties of TMDs. Understanding the interactions between lanthanide dopants and 2D TMDs host is one of the key problems to be resolved for their profound research studies. Herein, the interactions between Ce dopants and monolayer WS2 in a physical vapor deposition grown Ce‐doped WS2 monolayer are studied by combining scanning tunneling microscopy with optical characterizations with high spatial and temporal resolution. It is found that the highly anisotropic crystal field can effectively split the energy levels of the Ce dopants’ f orbital. The electrons in the split energy levels can bind the holes in the valence band maximum of the Ce‐doped WS2, forming optical bright excitons. These excitons collide with the free A excitons when increasing the pump fluences, reducing the A exciton's lifetime. This study may be beneficial for the design and fabrication of optical, electronic, and optoelectronic devices based on lanthanide‐doped TMDs. The monolayer WS2 crystal field can effectively split the electronic bands of the Ce dopant’ f orbital. The electrons in the split electronic bands can bind the holes in the valence band maximum of the Ce‐WS2, forming optical bright excitons. These excitons collide with the free A excitons when increasing the pump fluences, reducing the A exciton's lifetime.