20.4: Activation of Doped Silicon Film Using Semiconductor Blue Light Diode Laser Annealing

20.4: Activation of Doped Silicon Film Using Semiconductor Blue Light Diode Laser Annealing

We have investigated activation annealing of the doped poly silicon film of LTPS TFT by using CW semiconductor blue light diode laser. It has been found that by full melting and re‐crystallization, the sheet resistance can be reduced significantly to 1/3 of which can be realized by using conventiona...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2023-04, Vol.54 (S1), p.157-160
Hauptverfasser: Yang, Y., Kinoshita, M., Okuno, T., Hashizume, M., Saito, K., Sawai, T., Gotoh, J., Sugimoto, S.
Format: Artikel
Sprache:eng
Schlagworte:
Activation
BLDA
Blue Laser Diode
Crystallization
Laser beam annealing
Lateral-growth
Optical Fiber
Semiconductor lasers
Silicon films
TFT
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Zusammenfassung:We have investigated activation annealing of the doped poly silicon film of LTPS TFT by using CW semiconductor blue light diode laser. It has been found that by full melting and re‐crystallization, the sheet resistance can be reduced significantly to 1/3 of which can be realized by using conventional RTA treatment. We will report the experiment results in the paper.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.16251