Evaluation of ferroelectricity in BaTiO3 epitaxial thin film using Ca(Mn,Nb)O3 bottom electrode for high-temperature annealing

Due to epitaxial strain, epitaxial thin films exhibit unique properties compared with those in bulk. However, the presence of defects within these films disrupts the strain-induced effects. Although high-temperature annealing is a promising way to improve film quality, high temperature weakens botto...

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Veröffentlicht in:Applied physics letters 2023-07, Vol.123 (4)
Hauptverfasser: Yasuhara, Sou, Yasui, Shintaro, Hoshina, Takuya, Itoh, Mitsuru, Tsurumi, Takaaki
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Sprache:eng
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Zusammenfassung:Due to epitaxial strain, epitaxial thin films exhibit unique properties compared with those in bulk. However, the presence of defects within these films disrupts the strain-induced effects. Although high-temperature annealing is a promising way to improve film quality, high temperature weakens bottom electrode materials. To assess epitaxial strain's effects on the mitigation of other factors, there is a need for a novel bottom electrode material that can withstand high temperatures. In this study, we focused on Nb-doped CaMnO3 (CMNO) as a bottom electrode for the evaluation of BaTiO3 ferroelectricity. The CMNO epitaxial film was deposited on (100)SrTiO3 and showed electrical conductivity even after 1100 °C annealing. The ferroelectric material BaTiO3 was also epitaxially grown on CMNO/(100)SrTiO3 substrate, and its ferroelectric properties were evaluated. Finally, we revealed the ability of CMNO/(100)SrTiO3 to withstand temperatures up to 1100 °C as well as the notable enhancement of ferroelectric properties in the BaTiO3 film.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0140713