Millisecond electron spin coherence time for erbium ions in silicon

Millisecond electron spin coherence time for erbium ions in silicon

Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions...

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Veröffentlicht in:arXiv.org 2023-07
Hauptverfasser: Berkman, Ian R, Lyasota, Alexey, de Boo, Gabriele G, Bartholomew, John G, Lim, Shao Q, Johnson, Brett C, McCallum, Jeffrey C, Bin-Bin, Xu, Xie, Shouyi, Abrosimov, Nikolay V, Pohl, Hans-Joachim, Ahlefeldt, Rose L, Sellars, Matthew J, Yin, Chunming, Rogge, Sven
Format: Artikel
Sprache:eng
Schlagworte:
Accessibility
Data processing
Decay rate
Electron spin
Electrons
Erbium
Information processing
Magnetic resonance
Nanofabrication
Nuclear spin
Optical properties
Optical transition
Quantum phenomena
Qubits (quantum computing)
Silicon
Spin transition
Telecommunications
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Zusammenfassung:Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compatible Er3+ sites with long optical and electron spin coherence times, measured within a nuclear spin-free silicon crystal (
ISSN:2331-8422