Epitaxial Structures for Low-Barrier Mixing Microwave Diodes Grown on a GaAs Substrate

Epitaxial Structures for Low-Barrier Mixing Microwave Diodes Grown on a GaAs Substrate

The results of studies of InP/GaAs heterostructures based on metamorphic layers with stepwise and digital changes in composition are presented. The electrophysical characteristics of diodes fabricated based on these structures are compared with diodes grown on matched substrates with InP and GaAs ac...

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Veröffentlicht in:Bulletin of the Russian Academy of Sciences. Physics 2023-06, Vol.87 (6), p.857-861
Hauptverfasser: Samartsev, I. V., Nekorkin, S. M., Zvonkov, B. N., Rykov, A. V., Chigineva, A. B., Chechenin, Yu. I., Chilikov, A. A., Pankov, S. V.
Format: Artikel
Sprache:eng
Schlagworte:
Diodes
Epitaxial growth
Gallium arsenide
Hadrons
Heavy Ions
Heterostructures
Indium phosphides
Nuclear Physics
Physics
Physics and Astronomy
Substrates
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Zusammenfassung:The results of studies of InP/GaAs heterostructures based on metamorphic layers with stepwise and digital changes in composition are presented. The electrophysical characteristics of diodes fabricated based on these structures are compared with diodes grown on matched substrates with InP and GaAs active layers. It is shown that the use of InP/GaAs diodes in a triple balanced mixer made it possible to reduce the local oscillator signal power by a factor of 20.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873823702143