Thermal Stability of Ferroelectric Films Based on Hafnium–Zirconium Dioxide on Silicon

Results are presented that testify to an increase in the thermal stability and structural and electrical properties of films obtained via plasma-stimulated atomic layer deposition (PEALD). The films are of 20 nm ferroelectric HfO 2 and Hf 0.5 Zr 0.5 O 2 , with and without inserts of Al 2 O 3 monolayers in metal–ferroelectric–silicon mesa structures, that are promising for universal memory devices.