Self-Sustaining of the Conducting State and Bipolar Ionizing Gunn Domains in Pulse Avalanche Gallium Arsenide Diodes

Domain instability in nonequilibrium electron-hole plasma leads to the formation of narrow moving regions of the ionizing electric field, i.e., collapsing Gunn domains. In devices of power pulse electronics based on gallium arsenide, impact ionization in collapsing domains acts as an efficient mechanism for the generation of nonequilibrium carriers at low voltages and weak average electric fields.