Electrical Behavior of a Two-Terminal Organic–Inorganic Halide Perovskite Rewritable Memristor for Neuromorphic Operations

Two-terminal rewritable memristors based on organic-inorganic halide perovskites CH 3 NH 3 PbBr 3 :GO and CH 3 NH 3 PbI 3 :GO were manufactured for neuromorphic operations and their electrical characteristics were investigated. For a device based on organic-inorganic halide perovskite CH 3 NH 3 PbBr 3 :GO, the temperature variations in the current–voltage characteristics is presented in the temperature range 290–100 K. The mechanisms of charge transport and resistive switching in composite films in these devices are analyzed.