A comparative study on TiO2 nanoparticle and TiO2 nanosheets for resistive random accesses memory (RRAM) applications
The 3D TiO2 nanoparticles and 2D TiO2 nanosheets solutions were spin-coated on FTO substrates. A comparative resistive switching study was carried out by DC and AC measurements. The investigations revealed that the resistive switching ratio is enhanced when TiO2 nanoparticles were replaced by TiO2 n...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 1 |
container_start_page | |
container_title | |
container_volume | 2548 |
creator | Kumari, Anju Ponnam, Anjaneyulu |
description | The 3D TiO2 nanoparticles and 2D TiO2 nanosheets solutions were spin-coated on FTO substrates. A comparative resistive switching study was carried out by DC and AC measurements. The investigations revealed that the resistive switching ratio is enhanced when TiO2 nanoparticles were replaced by TiO2 nanosheets as an active layer. TiO2 nanoparticles exhibited one order of WORM type resistive switching. Whereas, TiO2 nanosheets exhibited two orders of Bipolar resistive switching behaviour. Both devices had data retention of ∼1 hour making them the effective device for non-volatile memory applications. |
doi_str_mv | 10.1063/5.0118301 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_journals_2838413945</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2838413945</sourcerecordid><originalsourceid>FETCH-LOGICAL-p631-148a7617c5a11dd19e89c1389fd7095310f653ab8da357c2a540d69e23aa7b23</originalsourceid><addsrcrecordid>eNpFkF9LwzAUxYMoOKcPfoOALyp05iZNmzyOMf_AZDD34Fu4S1PsWJuatMK-vXUb-HTh3t-553AIuQU2AZaJJzlhAEowOCMjkBKSPIPsnIwY02nCU_F5Sa5i3DLGdZ6rEemn1Pq6xYBd9eNo7PpiT31D19WS0wYbP5y6yu4cxab438Yv57pISx9ocLGKB3EYEF9TtNbF6CKtXe3Dnt6vVtP3B4ptu6vsYOObeE0uStxFd3OaY_LxPF_PXpPF8uVtNl0kbSYggVThED-3EgGKArRT2oJQuixypqUAVmZS4EYVKGRuOcqUFZl2XCDmGy7G5O74tQ3-u3exM1vfh2YwNFwJlYLQqRyoxyMVbdUd4pk2VDWGvQFm_ko10pxKFb9NjGjl</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>2838413945</pqid></control><display><type>conference_proceeding</type><title>A comparative study on TiO2 nanoparticle and TiO2 nanosheets for resistive random accesses memory (RRAM) applications</title><source>AIP Journals Complete</source><creator>Kumari, Anju ; Ponnam, Anjaneyulu</creator><contributor>Babu, B. Sridhar ; Prasad, B Anjaneya ; Swamy, Adepu Kumara ; Kumar, Kaushik</contributor><creatorcontrib>Kumari, Anju ; Ponnam, Anjaneyulu ; Babu, B. Sridhar ; Prasad, B Anjaneya ; Swamy, Adepu Kumara ; Kumar, Kaushik</creatorcontrib><description>The 3D TiO2 nanoparticles and 2D TiO2 nanosheets solutions were spin-coated on FTO substrates. A comparative resistive switching study was carried out by DC and AC measurements. The investigations revealed that the resistive switching ratio is enhanced when TiO2 nanoparticles were replaced by TiO2 nanosheets as an active layer. TiO2 nanoparticles exhibited one order of WORM type resistive switching. Whereas, TiO2 nanosheets exhibited two orders of Bipolar resistive switching behaviour. Both devices had data retention of ∼1 hour making them the effective device for non-volatile memory applications.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0118301</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Comparative studies ; Nanoparticles ; Nanosheets ; Spin coating ; Substrates ; Switching ; Titanium dioxide</subject><ispartof>AIP Conference Proceedings, 2023, Vol.2548 (1)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/5.0118301$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,794,4512,23930,23931,25140,27924,27925,76384</link.rule.ids></links><search><contributor>Babu, B. Sridhar</contributor><contributor>Prasad, B Anjaneya</contributor><contributor>Swamy, Adepu Kumara</contributor><contributor>Kumar, Kaushik</contributor><creatorcontrib>Kumari, Anju</creatorcontrib><creatorcontrib>Ponnam, Anjaneyulu</creatorcontrib><title>A comparative study on TiO2 nanoparticle and TiO2 nanosheets for resistive random accesses memory (RRAM) applications</title><title>AIP Conference Proceedings</title><description>The 3D TiO2 nanoparticles and 2D TiO2 nanosheets solutions were spin-coated on FTO substrates. A comparative resistive switching study was carried out by DC and AC measurements. The investigations revealed that the resistive switching ratio is enhanced when TiO2 nanoparticles were replaced by TiO2 nanosheets as an active layer. TiO2 nanoparticles exhibited one order of WORM type resistive switching. Whereas, TiO2 nanosheets exhibited two orders of Bipolar resistive switching behaviour. Both devices had data retention of ∼1 hour making them the effective device for non-volatile memory applications.</description><subject>Comparative studies</subject><subject>Nanoparticles</subject><subject>Nanosheets</subject><subject>Spin coating</subject><subject>Substrates</subject><subject>Switching</subject><subject>Titanium dioxide</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2023</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNpFkF9LwzAUxYMoOKcPfoOALyp05iZNmzyOMf_AZDD34Fu4S1PsWJuatMK-vXUb-HTh3t-553AIuQU2AZaJJzlhAEowOCMjkBKSPIPsnIwY02nCU_F5Sa5i3DLGdZ6rEemn1Pq6xYBd9eNo7PpiT31D19WS0wYbP5y6yu4cxab438Yv57pISx9ocLGKB3EYEF9TtNbF6CKtXe3Dnt6vVtP3B4ptu6vsYOObeE0uStxFd3OaY_LxPF_PXpPF8uVtNl0kbSYggVThED-3EgGKArRT2oJQuixypqUAVmZS4EYVKGRuOcqUFZl2XCDmGy7G5O74tQ3-u3exM1vfh2YwNFwJlYLQqRyoxyMVbdUd4pk2VDWGvQFm_ko10pxKFb9NjGjl</recordid><startdate>20230717</startdate><enddate>20230717</enddate><creator>Kumari, Anju</creator><creator>Ponnam, Anjaneyulu</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20230717</creationdate><title>A comparative study on TiO2 nanoparticle and TiO2 nanosheets for resistive random accesses memory (RRAM) applications</title><author>Kumari, Anju ; Ponnam, Anjaneyulu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p631-148a7617c5a11dd19e89c1389fd7095310f653ab8da357c2a540d69e23aa7b23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Comparative studies</topic><topic>Nanoparticles</topic><topic>Nanosheets</topic><topic>Spin coating</topic><topic>Substrates</topic><topic>Switching</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumari, Anju</creatorcontrib><creatorcontrib>Ponnam, Anjaneyulu</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumari, Anju</au><au>Ponnam, Anjaneyulu</au><au>Babu, B. Sridhar</au><au>Prasad, B Anjaneya</au><au>Swamy, Adepu Kumara</au><au>Kumar, Kaushik</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A comparative study on TiO2 nanoparticle and TiO2 nanosheets for resistive random accesses memory (RRAM) applications</atitle><btitle>AIP Conference Proceedings</btitle><date>2023-07-17</date><risdate>2023</risdate><volume>2548</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>The 3D TiO2 nanoparticles and 2D TiO2 nanosheets solutions were spin-coated on FTO substrates. A comparative resistive switching study was carried out by DC and AC measurements. The investigations revealed that the resistive switching ratio is enhanced when TiO2 nanoparticles were replaced by TiO2 nanosheets as an active layer. TiO2 nanoparticles exhibited one order of WORM type resistive switching. Whereas, TiO2 nanosheets exhibited two orders of Bipolar resistive switching behaviour. Both devices had data retention of ∼1 hour making them the effective device for non-volatile memory applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0118301</doi><tpages>6</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0094-243X |
ispartof | AIP Conference Proceedings, 2023, Vol.2548 (1) |
issn | 0094-243X 1551-7616 |
language | eng |
recordid | cdi_proquest_journals_2838413945 |
source | AIP Journals Complete |
subjects | Comparative studies Nanoparticles Nanosheets Spin coating Substrates Switching Titanium dioxide |
title | A comparative study on TiO2 nanoparticle and TiO2 nanosheets for resistive random accesses memory (RRAM) applications |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T09%3A46%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20comparative%20study%20on%20TiO2%20nanoparticle%20and%20TiO2%20nanosheets%20for%20resistive%20random%20accesses%20memory%20(RRAM)%20applications&rft.btitle=AIP%20Conference%20Proceedings&rft.au=Kumari,%20Anju&rft.date=2023-07-17&rft.volume=2548&rft.issue=1&rft.issn=0094-243X&rft.eissn=1551-7616&rft.coden=APCPCS&rft_id=info:doi/10.1063/5.0118301&rft_dat=%3Cproquest_scita%3E2838413945%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2838413945&rft_id=info:pmid/&rfr_iscdi=true |