A comparative study on TiO2 nanoparticle and TiO2 nanosheets for resistive random accesses memory (RRAM) applications

The 3D TiO2 nanoparticles and 2D TiO2 nanosheets solutions were spin-coated on FTO substrates. A comparative resistive switching study was carried out by DC and AC measurements. The investigations revealed that the resistive switching ratio is enhanced when TiO2 nanoparticles were replaced by TiO2 nanosheets as an active layer. TiO2 nanoparticles exhibited one order of WORM type resistive switching. Whereas, TiO2 nanosheets exhibited two orders of Bipolar resistive switching behaviour. Both devices had data retention of ∼1 hour making them the effective device for non-volatile memory applications.