Dynamics of electronic states in the insulating Intermediate surface phase of 1T-TaS\(_2\)

Dynamics of electronic states in the insulating Intermediate surface phase of 1T-TaS\(_2\)

This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS\(_2\). When heating the sample, the surface displays an intermediate insulating phase that persists for \(\sim 10\) K on top of a metallic bulk. The weaker screening of Coulomb repul...

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Veröffentlicht in:arXiv.org 2023-10
Hauptverfasser: Dong, Jingwei, Qi, Weiyan, Shin, Dongbin, Cario, Laurent, Chen, Zhesheng, Grasset, Romain, Boschetto, Davide, Weis, Mateusz, Lample, Pierrick, Pastor, Ernest, Ritschel, Tobias, Marino Marsi, Taleb, Amina, Park, Noejung, Rubio, Angel, Papalazarou, Evangelos, Perfetti, Luca
Format: Artikel
Sprache:eng
Schlagworte:
Bulk density
Charge density waves
Comparative studies
Displays
Electron states
Low temperature
Surface properties
Transition metal compounds
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Zusammenfassung:This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS\(_2\). When heating the sample, the surface displays an intermediate insulating phase that persists for \(\sim 10\) K on top of a metallic bulk. The weaker screening of Coulomb repulsion and stiffer Charge Density Wave (CDW) explain such resilience of a correlated insulator in the topmost layers. Both time resolved ARPES and transient reflectivity are employed to investigate the dynamics of electrons and CDW collective motion. It follows that the amplitude mode is always stiffer at the surface and displays variable coupling to the Mott-Peierls band, stronger in the low temperature phase and weaker in the intermediate one.
ISSN:2331-8422