Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS2/Ta2O5 vertical heterojunction
To date, many photodetectors exploiting the unique physical properties of transition metal dichalcogenides (TMDs) have been reported. While it is relatively simple to make a new device, optimizing the device's structure and its film morphology to reach its full potential in performance is quite...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2023-07, Vol.11 (27), p.9245-9251 |
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| container_issue | 27 |
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| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 11 |
| creator | Ryu, Hyeyoon Kim, Dohee Choi, Yongsu Kadyrov, Arman Park, Wook Lee, Seunghyun |
| description | To date, many photodetectors exploiting the unique physical properties of transition metal dichalcogenides (TMDs) have been reported. While it is relatively simple to make a new device, optimizing the device's structure and its film morphology to reach its full potential in performance is quite a challenge. In addition, the bulk of the work on TMDs has been conducted using mechanically exfoliated flakes (1 cm2), nearly transparent device stack can also be readily fabricated on an arbitrary substrate at low temperature ( |
| doi_str_mv | 10.1039/d3tc00351e |
| format | Article |
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While it is relatively simple to make a new device, optimizing the device's structure and its film morphology to reach its full potential in performance is quite a challenge. In addition, the bulk of the work on TMDs has been conducted using mechanically exfoliated flakes (<1 mm2) with no possibility of large-scale integrations. In this work, the performance of a photodetector is greatly increased by using several distinctive approaches. First, a flower-like ReS2 film is synthesized to maximize the light absorption surface area for enhanced light absorption and sensing capability. Second, a metal–insulator–semiconductor (MIS) contact layer is employed to reduce the Schottky barrier and lower the contact resistance. Third, the carrier transport is facilitated by utilizing a high mobility graphene layer, which also reduced the work function differences. Last, we structure the device into a vertical heterostructure to minimize the carrier transport distance. The resulting photodetector composed of a graphene/ReS2/Ta2O5 heterojunction exhibited one of the highest photoresponsivities (11.43 A W−1) among devices fabricated with synthesized large-area films. The large area (>1 cm2), nearly transparent device stack can also be readily fabricated on an arbitrary substrate at low temperature (<110 °C) for versatile integration with other electronic platforms.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/d3tc00351e</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Carrier transport ; Contact resistance ; Electromagnetic absorption ; Graphene ; Heterojunctions ; Heterostructures ; Low temperature ; MIS (semiconductors) ; Performance enhancement ; Photometers ; Physical properties ; Substrates ; Synthesis ; Tantalum ; Tantalum oxides ; Transition metal compounds ; Work functions</subject><ispartof>Journal of materials chemistry. 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Third, the carrier transport is facilitated by utilizing a high mobility graphene layer, which also reduced the work function differences. Last, we structure the device into a vertical heterostructure to minimize the carrier transport distance. The resulting photodetector composed of a graphene/ReS2/Ta2O5 heterojunction exhibited one of the highest photoresponsivities (11.43 A W−1) among devices fabricated with synthesized large-area films. The large area (>1 cm2), nearly transparent device stack can also be readily fabricated on an arbitrary substrate at low temperature (<110 °C) for versatile integration with other electronic platforms.</description><subject>Carrier transport</subject><subject>Contact resistance</subject><subject>Electromagnetic absorption</subject><subject>Graphene</subject><subject>Heterojunctions</subject><subject>Heterostructures</subject><subject>Low temperature</subject><subject>MIS (semiconductors)</subject><subject>Performance enhancement</subject><subject>Photometers</subject><subject>Physical properties</subject><subject>Substrates</subject><subject>Synthesis</subject><subject>Tantalum</subject><subject>Tantalum oxides</subject><subject>Transition metal compounds</subject><subject>Work functions</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNo9UNFKAzEQDKJgqX3xCwI-n012m9zlUWq1QqGg1deSS_Z6LTU5c6n-vieK-7IzO8MMLGPXUtxKgWbqMTshUEk6YyMQShSlwtn5PwZ9ySZ9fxDDVFJX2oxYWoTWBkeed5SamN5_CI8Nt7xrY46eMrkcE69tP5hiGIRdsl1Lgabzt_til-JX4J6CT_u8d_yZXmC6sbBW_JPScLFH3g4hKR5OweV9DFfsorHHniZ_e8xeHxab-bJYrR-f5neropMV5gLBgNZyZkvhLBBWvgZFyqjaS-XrqjS1w8aCEYYMKAmlIFHWjdCiASgJx-zmN7dL8eNEfd4e4imFoXILFWrE4SuI31TIXG0</recordid><startdate>20230713</startdate><enddate>20230713</enddate><creator>Ryu, Hyeyoon</creator><creator>Kim, Dohee</creator><creator>Choi, Yongsu</creator><creator>Kadyrov, Arman</creator><creator>Park, Wook</creator><creator>Lee, Seunghyun</creator><general>Royal Society of Chemistry</general><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20230713</creationdate><title>Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS2/Ta2O5 vertical heterojunction</title><author>Ryu, Hyeyoon ; Kim, Dohee ; Choi, Yongsu ; Kadyrov, Arman ; Park, Wook ; Lee, Seunghyun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p183t-32926614a70ca2e38db25e595bd15db879bc3fa2909e9251270e07bf060f227e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Carrier transport</topic><topic>Contact resistance</topic><topic>Electromagnetic absorption</topic><topic>Graphene</topic><topic>Heterojunctions</topic><topic>Heterostructures</topic><topic>Low temperature</topic><topic>MIS (semiconductors)</topic><topic>Performance enhancement</topic><topic>Photometers</topic><topic>Physical properties</topic><topic>Substrates</topic><topic>Synthesis</topic><topic>Tantalum</topic><topic>Tantalum oxides</topic><topic>Transition metal compounds</topic><topic>Work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ryu, Hyeyoon</creatorcontrib><creatorcontrib>Kim, Dohee</creatorcontrib><creatorcontrib>Choi, Yongsu</creatorcontrib><creatorcontrib>Kadyrov, Arman</creatorcontrib><creatorcontrib>Park, Wook</creatorcontrib><creatorcontrib>Lee, Seunghyun</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ryu, Hyeyoon</au><au>Kim, Dohee</au><au>Choi, Yongsu</au><au>Kadyrov, Arman</au><au>Park, Wook</au><au>Lee, Seunghyun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS2/Ta2O5 vertical heterojunction</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2023-07-13</date><risdate>2023</risdate><volume>11</volume><issue>27</issue><spage>9245</spage><epage>9251</epage><pages>9245-9251</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>To date, many photodetectors exploiting the unique physical properties of transition metal dichalcogenides (TMDs) have been reported. While it is relatively simple to make a new device, optimizing the device's structure and its film morphology to reach its full potential in performance is quite a challenge. In addition, the bulk of the work on TMDs has been conducted using mechanically exfoliated flakes (<1 mm2) with no possibility of large-scale integrations. In this work, the performance of a photodetector is greatly increased by using several distinctive approaches. First, a flower-like ReS2 film is synthesized to maximize the light absorption surface area for enhanced light absorption and sensing capability. Second, a metal–insulator–semiconductor (MIS) contact layer is employed to reduce the Schottky barrier and lower the contact resistance. Third, the carrier transport is facilitated by utilizing a high mobility graphene layer, which also reduced the work function differences. Last, we structure the device into a vertical heterostructure to minimize the carrier transport distance. The resulting photodetector composed of a graphene/ReS2/Ta2O5 heterojunction exhibited one of the highest photoresponsivities (11.43 A W−1) among devices fabricated with synthesized large-area films. The large area (>1 cm2), nearly transparent device stack can also be readily fabricated on an arbitrary substrate at low temperature (<110 °C) for versatile integration with other electronic platforms.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d3tc00351e</doi><tpages>7</tpages></addata></record> |
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| identifier | ISSN: 2050-7526 |
| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2023-07, Vol.11 (27), p.9245-9251 |
| issn | 2050-7526 2050-7534 |
| language | eng |
| recordid | cdi_proquest_journals_2836330503 |
| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Carrier transport Contact resistance Electromagnetic absorption Graphene Heterojunctions Heterostructures Low temperature MIS (semiconductors) Performance enhancement Photometers Physical properties Substrates Synthesis Tantalum Tantalum oxides Transition metal compounds Work functions |
| title | Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS2/Ta2O5 vertical heterojunction |
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