Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS2/Ta2O5 vertical heterojunction

Enhanced performance of a photodetector based on a graphene/CVD-grown dendritic ReS2/Ta2O5 vertical heterojunction

To date, many photodetectors exploiting the unique physical properties of transition metal dichalcogenides (TMDs) have been reported. While it is relatively simple to make a new device, optimizing the device's structure and its film morphology to reach its full potential in performance is quite...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2023-07, Vol.11 (27), p.9245-9251
Hauptverfasser: Ryu, Hyeyoon, Kim, Dohee, Choi, Yongsu, Kadyrov, Arman, Park, Wook, Lee, Seunghyun
Format: Artikel
Sprache:eng
Schlagworte:
Carrier transport
Contact resistance
Electromagnetic absorption
Graphene
Heterojunctions
Heterostructures
Low temperature
MIS (semiconductors)
Performance enhancement
Photometers
Physical properties
Substrates
Synthesis
Tantalum
Tantalum oxides
Transition metal compounds
Work functions
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Beschreibung
Zusammenfassung:To date, many photodetectors exploiting the unique physical properties of transition metal dichalcogenides (TMDs) have been reported. While it is relatively simple to make a new device, optimizing the device's structure and its film morphology to reach its full potential in performance is quite a challenge. In addition, the bulk of the work on TMDs has been conducted using mechanically exfoliated flakes (1 cm2), nearly transparent device stack can also be readily fabricated on an arbitrary substrate at low temperature (
ISSN:2050-7526
2050-7534
DOI:10.1039/d3tc00351e