Quantifying photodiode nonlinear characteristic induced by optical power and voltage
A new mathematical model, optical-power-dependent model R(P), is proposed by investigating the nonlinearity of modified uni-traveling carrier photodiodes (MUTC-PD). Benefiting from this model, the harmonic power and output 3rd order intercept point (OIP3) of a photodiode can be calculated. Consideri...
Gespeichert in:
Veröffentlicht in: | Optical and quantum electronics 2023-09, Vol.55 (9), Article 837 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 9 |
container_start_page | |
container_title | Optical and quantum electronics |
container_volume | 55 |
creator | Ye, JiHong Huang, YongQing Wang, ZiCheng Jiang, Chen Du, JiaWei |
description | A new mathematical model, optical-power-dependent model R(P), is proposed by investigating the nonlinearity of modified uni-traveling carrier photodiodes (MUTC-PD). Benefiting from this model, the harmonic power and output 3rd order intercept point (OIP3) of a photodiode can be calculated. Considering a bias voltage shift of the photodiode caused by a large voltage swing effect, the R(P) mathematical model is expanded into a voltage-related one, which is the optical-power-and-voltage-dependent model, R(P,V). The calculate results of both mathematical models are completely in accord with simulation results. |
doi_str_mv | 10.1007/s11082-023-05030-1 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2834483703</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2834483703</sourcerecordid><originalsourceid>FETCH-LOGICAL-c314t-e39991bb035b294e37cdcc87d3e3544b470c48ddc8e54057230a3c221b3910513</originalsourceid><addsrcrecordid>eNp9kMtKAzEUhoMoWKsv4CrgOnqSk-nMLKV4g4IIFdyFTJK2KTUZkxmlb-_UEdy5OvDzXzgfIZccrjlAeZM5h0owEMigAATGj8iEF6VgFS_fjslk0Gasqnl9Ss5y3gLATBYwIcuXXofOr_Y-rGm7iV20PlpHQww7H5xO1Gx00qZzyefOG-qD7Y2ztNnT2A6C3tE2frlEdbD0M-46vXbn5GSld9ld_N4peb2_W84f2eL54Wl-u2AGueyYw7quedMAFo2opcPSWGOq0qLDQspGlmBkZa2pXCFheAZBoxGCN1hzKDhOydXY26b40bvcqW3sUxgmlahQygpLwMElRpdJMefkVqpN_l2nveKgDvTUSE8N9NQPPXWoxjGUB3NYu_RX_U_qG-RhcnE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2834483703</pqid></control><display><type>article</type><title>Quantifying photodiode nonlinear characteristic induced by optical power and voltage</title><source>SpringerLink Journals - AutoHoldings</source><creator>Ye, JiHong ; Huang, YongQing ; Wang, ZiCheng ; Jiang, Chen ; Du, JiaWei</creator><creatorcontrib>Ye, JiHong ; Huang, YongQing ; Wang, ZiCheng ; Jiang, Chen ; Du, JiaWei</creatorcontrib><description>A new mathematical model, optical-power-dependent model R(P), is proposed by investigating the nonlinearity of modified uni-traveling carrier photodiodes (MUTC-PD). Benefiting from this model, the harmonic power and output 3rd order intercept point (OIP3) of a photodiode can be calculated. Considering a bias voltage shift of the photodiode caused by a large voltage swing effect, the R(P) mathematical model is expanded into a voltage-related one, which is the optical-power-and-voltage-dependent model, R(P,V). The calculate results of both mathematical models are completely in accord with simulation results.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-023-05030-1</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Computer Communication Networks ; Electric potential ; Electrical Engineering ; Lasers ; Mathematical analysis ; Mathematical models ; Nonlinearity ; Optical Devices ; Optics ; Photodiodes ; Photonics ; Physics ; Physics and Astronomy ; Voltage</subject><ispartof>Optical and quantum electronics, 2023-09, Vol.55 (9), Article 837</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c314t-e39991bb035b294e37cdcc87d3e3544b470c48ddc8e54057230a3c221b3910513</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11082-023-05030-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11082-023-05030-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Ye, JiHong</creatorcontrib><creatorcontrib>Huang, YongQing</creatorcontrib><creatorcontrib>Wang, ZiCheng</creatorcontrib><creatorcontrib>Jiang, Chen</creatorcontrib><creatorcontrib>Du, JiaWei</creatorcontrib><title>Quantifying photodiode nonlinear characteristic induced by optical power and voltage</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>A new mathematical model, optical-power-dependent model R(P), is proposed by investigating the nonlinearity of modified uni-traveling carrier photodiodes (MUTC-PD). Benefiting from this model, the harmonic power and output 3rd order intercept point (OIP3) of a photodiode can be calculated. Considering a bias voltage shift of the photodiode caused by a large voltage swing effect, the R(P) mathematical model is expanded into a voltage-related one, which is the optical-power-and-voltage-dependent model, R(P,V). The calculate results of both mathematical models are completely in accord with simulation results.</description><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>Electric potential</subject><subject>Electrical Engineering</subject><subject>Lasers</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Nonlinearity</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photodiodes</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Voltage</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKAzEUhoMoWKsv4CrgOnqSk-nMLKV4g4IIFdyFTJK2KTUZkxmlb-_UEdy5OvDzXzgfIZccrjlAeZM5h0owEMigAATGj8iEF6VgFS_fjslk0Gasqnl9Ss5y3gLATBYwIcuXXofOr_Y-rGm7iV20PlpHQww7H5xO1Gx00qZzyefOG-qD7Y2ztNnT2A6C3tE2frlEdbD0M-46vXbn5GSld9ld_N4peb2_W84f2eL54Wl-u2AGueyYw7quedMAFo2opcPSWGOq0qLDQspGlmBkZa2pXCFheAZBoxGCN1hzKDhOydXY26b40bvcqW3sUxgmlahQygpLwMElRpdJMefkVqpN_l2nveKgDvTUSE8N9NQPPXWoxjGUB3NYu_RX_U_qG-RhcnE</recordid><startdate>20230901</startdate><enddate>20230901</enddate><creator>Ye, JiHong</creator><creator>Huang, YongQing</creator><creator>Wang, ZiCheng</creator><creator>Jiang, Chen</creator><creator>Du, JiaWei</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20230901</creationdate><title>Quantifying photodiode nonlinear characteristic induced by optical power and voltage</title><author>Ye, JiHong ; Huang, YongQing ; Wang, ZiCheng ; Jiang, Chen ; Du, JiaWei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c314t-e39991bb035b294e37cdcc87d3e3544b470c48ddc8e54057230a3c221b3910513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>Electric potential</topic><topic>Electrical Engineering</topic><topic>Lasers</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Nonlinearity</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photodiodes</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ye, JiHong</creatorcontrib><creatorcontrib>Huang, YongQing</creatorcontrib><creatorcontrib>Wang, ZiCheng</creatorcontrib><creatorcontrib>Jiang, Chen</creatorcontrib><creatorcontrib>Du, JiaWei</creatorcontrib><collection>CrossRef</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ye, JiHong</au><au>Huang, YongQing</au><au>Wang, ZiCheng</au><au>Jiang, Chen</au><au>Du, JiaWei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantifying photodiode nonlinear characteristic induced by optical power and voltage</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2023-09-01</date><risdate>2023</risdate><volume>55</volume><issue>9</issue><artnum>837</artnum><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>A new mathematical model, optical-power-dependent model R(P), is proposed by investigating the nonlinearity of modified uni-traveling carrier photodiodes (MUTC-PD). Benefiting from this model, the harmonic power and output 3rd order intercept point (OIP3) of a photodiode can be calculated. Considering a bias voltage shift of the photodiode caused by a large voltage swing effect, the R(P) mathematical model is expanded into a voltage-related one, which is the optical-power-and-voltage-dependent model, R(P,V). The calculate results of both mathematical models are completely in accord with simulation results.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11082-023-05030-1</doi><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0306-8919 |
ispartof | Optical and quantum electronics, 2023-09, Vol.55 (9), Article 837 |
issn | 0306-8919 1572-817X |
language | eng |
recordid | cdi_proquest_journals_2834483703 |
source | SpringerLink Journals - AutoHoldings |
subjects | Characterization and Evaluation of Materials Computer Communication Networks Electric potential Electrical Engineering Lasers Mathematical analysis Mathematical models Nonlinearity Optical Devices Optics Photodiodes Photonics Physics Physics and Astronomy Voltage |
title | Quantifying photodiode nonlinear characteristic induced by optical power and voltage |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T13%3A49%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Quantifying%20photodiode%20nonlinear%20characteristic%20induced%20by%20optical%20power%20and%20voltage&rft.jtitle=Optical%20and%20quantum%20electronics&rft.au=Ye,%20JiHong&rft.date=2023-09-01&rft.volume=55&rft.issue=9&rft.artnum=837&rft.issn=0306-8919&rft.eissn=1572-817X&rft_id=info:doi/10.1007/s11082-023-05030-1&rft_dat=%3Cproquest_cross%3E2834483703%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2834483703&rft_id=info:pmid/&rfr_iscdi=true |