Quantifying photodiode nonlinear characteristic induced by optical power and voltage

A new mathematical model, optical-power-dependent model R(P), is proposed by investigating the nonlinearity of modified uni-traveling carrier photodiodes (MUTC-PD). Benefiting from this model, the harmonic power and output 3rd order intercept point (OIP3) of a photodiode can be calculated. Consideri...

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Veröffentlicht in:Optical and quantum electronics 2023-09, Vol.55 (9), Article 837
Hauptverfasser: Ye, JiHong, Huang, YongQing, Wang, ZiCheng, Jiang, Chen, Du, JiaWei
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Jiang, Chen
Du, JiaWei
description A new mathematical model, optical-power-dependent model R(P), is proposed by investigating the nonlinearity of modified uni-traveling carrier photodiodes (MUTC-PD). Benefiting from this model, the harmonic power and output 3rd order intercept point (OIP3) of a photodiode can be calculated. Considering a bias voltage shift of the photodiode caused by a large voltage swing effect, the R(P) mathematical model is expanded into a voltage-related one, which is the optical-power-and-voltage-dependent model, R(P,V). The calculate results of both mathematical models are completely in accord with simulation results.
doi_str_mv 10.1007/s11082-023-05030-1
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subjects Characterization and Evaluation of Materials
Computer Communication Networks
Electric potential
Electrical Engineering
Lasers
Mathematical analysis
Mathematical models
Nonlinearity
Optical Devices
Optics
Photodiodes
Photonics
Physics
Physics and Astronomy
Voltage
title Quantifying photodiode nonlinear characteristic induced by optical power and voltage
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