Quantifying photodiode nonlinear characteristic induced by optical power and voltage
A new mathematical model, optical-power-dependent model R(P), is proposed by investigating the nonlinearity of modified uni-traveling carrier photodiodes (MUTC-PD). Benefiting from this model, the harmonic power and output 3rd order intercept point (OIP3) of a photodiode can be calculated. Consideri...
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Veröffentlicht in: | Optical and quantum electronics 2023-09, Vol.55 (9), Article 837 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A new mathematical model, optical-power-dependent model R(P), is proposed by investigating the nonlinearity of modified uni-traveling carrier photodiodes (MUTC-PD). Benefiting from this model, the harmonic power and output 3rd order intercept point (OIP3) of a photodiode can be calculated. Considering a bias voltage shift of the photodiode caused by a large voltage swing effect, the R(P) mathematical model is expanded into a voltage-related one, which is the optical-power-and-voltage-dependent model, R(P,V). The calculate results of both mathematical models are completely in accord with simulation results. |
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ISSN: | 0306-8919 1572-817X |
DOI: | 10.1007/s11082-023-05030-1 |