Quantifying photodiode nonlinear characteristic induced by optical power and voltage

A new mathematical model, optical-power-dependent model R(P), is proposed by investigating the nonlinearity of modified uni-traveling carrier photodiodes (MUTC-PD). Benefiting from this model, the harmonic power and output 3rd order intercept point (OIP3) of a photodiode can be calculated. Consideri...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Optical and quantum electronics 2023-09, Vol.55 (9), Article 837
Hauptverfasser: Ye, JiHong, Huang, YongQing, Wang, ZiCheng, Jiang, Chen, Du, JiaWei
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A new mathematical model, optical-power-dependent model R(P), is proposed by investigating the nonlinearity of modified uni-traveling carrier photodiodes (MUTC-PD). Benefiting from this model, the harmonic power and output 3rd order intercept point (OIP3) of a photodiode can be calculated. Considering a bias voltage shift of the photodiode caused by a large voltage swing effect, the R(P) mathematical model is expanded into a voltage-related one, which is the optical-power-and-voltage-dependent model, R(P,V). The calculate results of both mathematical models are completely in accord with simulation results.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-023-05030-1