Light‐Emitting Device Based on Amplified Spontaneous Emission
In recent years, with the rapid development of military, optical communication, biological imaging, and other fields, practical engineering applications such as fiber‐optic gyroscope, wavelength division multiplexing, and optical coherence tomography have put forward higher requirements on light sou...
Gespeichert in:
Veröffentlicht in: | Laser & photonics reviews 2023-07, Vol.17 (7), p.n/a |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In recent years, with the rapid development of military, optical communication, biological imaging, and other fields, practical engineering applications such as fiber‐optic gyroscope, wavelength division multiplexing, and optical coherence tomography have put forward higher requirements on light sources. Amplified spontaneous emission (ASE) light source has become an excellent candidate due to its advantages such as suitable bandwidth, low coherence, and high power. Although the ASE light source is developed to a certain extent, there is still great room for improvement in the choice of gain medium and device structure. In order to accelerate the development and practical engineering application of ASE optoelectronic devices, it is of great significance to grasp the basic characteristics of the gain materials and the design of the device structure. In this review, the principle of the ASE effect and its difference with the generation of lasing are analyzed. Then, the optical gain properties of various gain materials, together with different structural types of electrically pumped ASE devices and their practical engineering applications, are summarized. Finally, the new ASE light‐emitting devices integrated with high‐gain materials and low‐cost structures are prospected to provide more ideas for their development.
The amplified spontaneous emission (ASE) light sources are critical in many engineering applications. The performances of electrically pumped ASE devices depend on the photoelectronic properties of gain medium and device structure design. Therefore, the new ASE devices integrated with high‐gain materials and low‐cost structures are prospected to provide more ideas for their development. |
---|---|
ISSN: | 1863-8880 1863-8899 |
DOI: | 10.1002/lpor.202200908 |