Benchmarking Noise and Dephasing in Emerging Electrical Materials for Quantum Technologies

As quantum technologies develop, a specific class of electrically conducting materials is rapidly gaining interest because they not only form the core quantum‐enabled elements in superconducting qubits, semiconductor nanostructures, or sensing devices, but also the peripheral circuitry. The phase coherence of the electronic wave function in these emerging materials will be crucial when incorporated in the quantum architecture. The loss of phase memory, or dephasing, occurs when a quantum system interacts with the fluctuations in the local electromagnetic environment, which manifests in “noise” in the electrical conductivity. Hence, characterizing these materials and devices therefrom, for quantum applications, requires evaluation of both dephasing and noise, although there are very few materials where these properties are investigated simultaneously. Here, the available data on magnetotransport and low‐frequency fluctuations in electrical conductivity are reviewed to benchmark the dephasing and noise. The focus is on new materials that are of direct interest to quantum technologies. The physical processes causing dephasing and noise in these systems are elaborated, the impact of both intrinsic and extrinsic parameters from materials synthesis and devices realization are evaluated, and it is hoped that a clearer pathway to design and characterize both material and devices for quantum applications is thus provided. The available data on low‐frequency fluctuations in electrical properties are reviewed to benchmark dephasing and noise in materials that are of direct interest to quantum technologies. The physical processes causing dephasing and noise are elaborated, the impact of both intrinsic and extrinsic parameters is evaluated, and it is hoped that a clearer pathway to design, characterize and implement both material and devices for quantum applications is thus provided.