Production and Characterizations of Sol–Gel-Derived Li, Cu:NiOx Particles: An Investigation on the Effects of Li and Cu Incorporation

Nickel oxide, a p -type semiconductor material with a large band gap (~ 3.6–4.0 eV), has gained interest from researchers due to its recent and widespread uses. In this work, pristine and doped (Li and Li, Cu) NiO x particles were obtained by the sol–gel method with different fractions (Li: 0.05; Cu...

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Veröffentlicht in:Journal of electronic materials 2023-08, Vol.52 (8), p.5534-5542
Hauptverfasser: Uzunbayır, Begüm, Akalın, Salih Alper, Yıldırım, Serdar, Erol, Mustafa, Oğuzlar, Sibel
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Sprache:eng
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Zusammenfassung:Nickel oxide, a p -type semiconductor material with a large band gap (~ 3.6–4.0 eV), has gained interest from researchers due to its recent and widespread uses. In this work, pristine and doped (Li and Li, Cu) NiO x particles were obtained by the sol–gel method with different fractions (Li: 0.05; Cu: 0.00, 0.05, 0.1, 0.15, 0.30). Phase structures, functional groups, elemental analyses, and optical properties were investigated by x-ray diffractometer (XRD), Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy (XPS), and photoluminescence measurements, respectively. The XPS and XRD results indicated that Li + and Cu 2+ incorporation into NiO x structure was successfully achieved and the crystallite size decreased owing to Li + and Cu 2+ addition. The particles were excited at 362 nm and exhibited a peak at 550 nm as a maximum emission peak with bi-exponential decay curves. With the Li + and Cu 2+ incorporation into the structure, both emission-based intensity and average decay time values decreased. Graphical Abstract
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-023-10500-z