Doped Graphene Quantum Dots Modified Zn0.9Cd0.1Se for Improved Photoelectric Properties

S‐graphene quantum dots (GQDs), N‐GQDs, P‐GQDs, and Cl‐GQDs are prepared by a solution chemistry method and further incorporated with ZnxCd1−xSe by one‐step hydrothermal method. In the previous study, ZnxCd1−xSe reached the optimal photoelectric performances at the Zn/Cd ratio of 0.9:0.1, so the Zn0.9Cd0.1Se were combined with doped GQDs (D‐GQDs) to form Zn0.9Cd0.1Se/doped‐GQDs. The influence of GQDs doped with different elements on the photoelectric properties of Zn0.9Cd0.1Se composites is discussed. Compared with pristine Zn0.9Cd0.1Se, Zn0.9Cd0.1Se/Cl‐GQDs, and Zn0.9Cd0.1Se/P‐GQDs can improve the photocurrent response and current intensity, therein, Zn0.9Cd0.1Se/Cl‐GQDs reaches the lowest interfacial charge transfer resistance and the highest photocurrent response of 5.48 × 10−6 A cm−2. Mott–Schottky analysis shows that the fitting slope of Zn0.9Cd0.1Se/Cl‐GQDs composites is significantly lower than that of Zn0.9Cd0.1Se/GQDs with other doped elements. The results indicate that Zn0.9Cd0.1Se/Cl‐GQDs composites has the largest carrier density, which is beneficial to charge conduction. Doped graphene quantum dots (GQDs) are used to compound with Zn0.9Cd0.1Se, which brings more functional groups to the surface of the composite, increases the active sites on the surface, and provides a new electron transport path. Doped GQDs can be used as carriers to transport photogenerated electrons to external circuits to prevent electron–hole recombination.