Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

The switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices of different structures were experimented after exposure to a gamma irradiation environment. The experimental results for on-state were studied. The comparisons are shown f...

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Veröffentlicht in:	Electronics (Basel) 2023-05, Vol.12 (10), p.2194
Hauptverfasser:	Shu, Lei, Liao, Huai-Lin, Wu, Zi-Yuan, Fang, Xing-Yu, Liang, Shi-Wei, Li, Tong-De, Wang, Liang, Wang, Jun, Zhao, Yuan-Fu
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis CAD Computer aided design Electronic devices Environmental aspects Field effect transistors Gamma irradiation Gamma rays Influence Interfaces Metal oxide semiconductor field effect transistors Metal oxide semiconductors MOSFETs Nuclear power plants Radiation Safety and security measures Semiconductor devices Shielding (Radiation) Silicon carbide Switching
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Beschreibung
Zusammenfassung:	The switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices of different structures were experimented after exposure to a gamma irradiation environment. The experimental results for on-state were studied. The comparisons are shown for SiC MOSFET power devices with planar, trench and double trench structures tested for total ionizing dose (TID). A higher degradation of the switching characteristics was observed for the double trench structure. The physical mechanisms for these switching characteristics variations were analyzed. In addition, they were confirmed by technology computer-aided design (TCAD) simulation.
ISSN:	2079-9292 2079-9292
DOI:	10.3390/electronics12102194