Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

We investigate the effect of post-metal annealing temperature ( T PMA ) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfO x ferroelectric tunnel junctions. Through conductance analysis and low-frequency noise spectroscopy, the effects of T PMA on RS mechanisms are demonstrated. It...

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Veröffentlicht in:	IEEE electron device letters 2023-06, Vol.44 (6), p.1-1
Hauptverfasser:	Koo, Ryun-Han, Shin, Wonjun, Min, Kyung Kyu, Kwon, Dongseok, Kim, Jae-Joon, Kwon, Daewoong, Lee, Jong-Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">ferroelectric tunnel junction (FTJ) <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">low-frequency noise (LFN) <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">post-metal annealing (PMA) Annealing Ferroelectric materials Ferroelectricity Hafnium oxide Iron LF noise Logic gates Resistance Switches Switching Tunnel junctions Tunneling
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