Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

We investigate the effect of post-metal annealing temperature ( T PMA ) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfO x ferroelectric tunnel junctions. Through conductance analysis and low-frequency noise spectroscopy, the effects of T PMA on RS mechanisms are demonstrated. It...

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Veröffentlicht in:IEEE electron device letters 2023-06, Vol.44 (6), p.1-1
Hauptverfasser: Koo, Ryun-Han, Shin, Wonjun, Min, Kyung Kyu, Kwon, Dongseok, Kim, Jae-Joon, Kwon, Daewoong, Lee, Jong-Ho
Format: Artikel
Sprache:eng
Schlagworte:
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<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">low-frequency noise (LFN)
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Annealing
Ferroelectric materials
Ferroelectricity
Hafnium oxide
Iron
LF noise
Logic gates
Resistance
Switches
Switching
Tunnel junctions
Tunneling
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Zusammenfassung:We investigate the effect of post-metal annealing temperature ( T PMA ) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfO x ferroelectric tunnel junctions. Through conductance analysis and low-frequency noise spectroscopy, the effects of T PMA on RS mechanisms are demonstrated. It is revealed that the non-FE RS, redistribution of oxygen vacancies, is suppressed with an increase in T PMA . The effects of different RS mechanisms on the tunneling electroresistance and cycling endurance characteristics are systematically investigated.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3267771