Photoresistance of a Ba0.8Sr0.2TiO3/LaMnO3/Ba0.8Sr0.2TiO3/MgO Film Heterostructure

Photoresistance of a Ba0.8Sr0.2TiO3/LaMnO3/Ba0.8Sr0.2TiO3/MgO Film Heterostructure

—The negative photoconductivity effect is observed in the Ba 0.8 Sr 0.2 TiO 3 /LaMnO 3 /Ba 0.8 Sr 0.2 TiO 3 heterostructure on an MgO substrate when it is illuminated with monochromatic green light from the side of the ferroelectric film. The photoresistance effect is explained by partial screening...

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Veröffentlicht in:Bulletin of the Russian Academy of Sciences. Physics 2023-04, Vol.87 (4), p.462-464
Hauptverfasser: Chibirev, A. O., Leontyev, A. V., Salikhov, T. M., Mamin, R. F.
Format: Artikel
Sprache:eng
Schlagworte:
Ferroelectric materials
Ferroelectricity
Hadrons
Heavy Ions
Heterostructures
Lanthanum compounds
Magnesium oxide
Nuclear Physics
Photoconductivity
Physics
Physics and Astronomy
Substrates
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Zusammenfassung:—The negative photoconductivity effect is observed in the Ba 0.8 Sr 0.2 TiO 3 /LaMnO 3 /Ba 0.8 Sr 0.2 TiO 3 heterostructure on an MgO substrate when it is illuminated with monochromatic green light from the side of the ferroelectric film. The photoresistance effect is explained by partial screening of the polarization of the ferroelectric by photostimulated carriers.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873822701453