Thin-Layer InAlPSbAs/InAs Heterostructures: Growth Kinetics, Morphology, and Structure

— The results of growing InAlPSbAs/InAs thin-layer heterostructures by floating-zone recrystallization with a temperature gradient are discussed. In a model of regular solutions, the analysis of heterophase equilibria in the In–Al–P–Sb–As system is carried out. The growth kinetics is studied as a function of the thickness of the liquid phase ( l ), and the element concentrations, the substrate temperature ( T ), and the temperature gradient ( G ). The growth modes are investigated and an analysis is carried out for spinodal decompositions of solid solutions. It is shown that the substrate temperature and the temperature gradient have a significant effect on the growth kinetics. Auger-electron spectroscopy is used to study the elemental depth profiles of the InAlPSbAs solid solution and show the advantages of liquid-phase replenishment to obtain layers of constant composition. The structural perfection of InAlPSbAs solid solutions on an InAs substrate is studied. It is established that the best structural perfection of the layers is achieved at T < 873 K, G < 20 K/cm, and a liquid-zone thickness of 80 < l < 120 µm. The surface morphology of the InAlPSbAs solid solutions on InAs is studied by scanning probe microscopy. It is shown that at T < 873 K, G < 20 K/cm, and a liquid-zone thickness of 80 < l < 120 µm the root-mean-square surface roughness does not exceed 1 nm.