High-sensitivity silicon carbide divacancy-based temperature sensing
Color centers in silicon carbide have become potentially versatile quantum sensors. Particularly, wide temperature-range temperature sensing has been realized in recent years. However, the sensitivity is limited due to the short dephasing time of the color centers. In this work, we developed a high-...
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Veröffentlicht in: | Nanoscale 2023-05, Vol.15 (18), p.8432-8436 |
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Sprache: | eng |
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Zusammenfassung: | Color centers in silicon carbide have become potentially versatile quantum sensors. Particularly, wide temperature-range temperature sensing has been realized in recent years. However, the sensitivity is limited due to the short dephasing time
of the color centers. In this work, we developed a high-sensitivity silicon carbide divacancy-based thermometer using the thermal Carr-Purcell-Meiboom-Gill (TCPMG) method. First, the zero-field splitting
D
of the PL6 divacancy as a function of temperature was measured with a linear slope of −99.7 kHz K
−1
. The coherence times of TCPMG pulses linearly increased with the pulse number and the longest coherence time was about 21 μs, which was ten times higher than
. The corresponding temperature-sensing sensitivity was 13.4 mK Hz
−1/2
, which was about 15 times higher than previous results. Finally, we monitored the laboratory temperature variations for 24 hours using the TCMPG pulse. The experiments pave the way for the application of silicon carbide-based high-sensitivity thermometers in the semiconductor industry, biology, and materials sciences.
We developed a high sensitivity (13.4 mK Hz
−1/2
) silicon carbide divacancy-based thermometer using the thermal dynamical decoupling method and used it to monitor the laboratory temperature variations for 24 hours. |
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ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/d3nr00430a |